ISSN Online: 2377-424X
ISBN Print: 0-85295-345-3
International Heat Transfer Conference 10
LARGE-SCALE SIMULATION OF THE CZOCHRALSKI GROWTH OF SILICON CRYSTALS
Abstract
The Czochralski (CZ) method for crystal growth
from the melt is the primary system used for
manufacturing the large-diameter, silicon crystals used
as substrates for microelectronic and optoelectronic
devices. Large-scale simulations of heat transfer,
convection in the melt, impurity incorporation into
the crystal and of the link between these predictions
and crystal quality have the potential to improve
drastically the performance of these systems and to
supply rational designs for the next generation of
equipment for the growth of even larger crystals. The
status of large-scale simulation of CZ systems is
reviewed here with an emphasis placed on linking
these predictions to the physical process. Perspectives
are presented on the impact of these simulations on
the design and operation of CZ systems.