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ISSN Online: 2377-424X

ISBN Print: 0-85295-345-3

International Heat Transfer Conference 10
August, 14-18, 1994, Brighton, UK

Chemical Vapor Deposition in Low Pressure Batch Furnaces

Get access (open in a dialog) DOI: 10.1615/IHTC10.130
pages 269-274

Аннотация

A two-dimensional axisymmetric model for low pressure chemical vapor deposition in a multiwafer batch reactor has been developed. The model includes a rigorous description of multicomponent species transport, gas phase chemistry, surface chemistry, convective heat transfer, wafer heat conduction, and surface-to-surface radiative exchange with specular reflection and partially transmitting quartz surfaces. The model is designed to execute rapidly on a small computer workstation so that it may be used by semiconductor manufacturing companies in the selection of optimum processing conditions.
The model has been used to simulate the deposition of polysilicon films from silane gas. Predictions from the model are found to be in good agreement with the reactor deposition data from a commercial reactor. Simulations have been performed to explore the aspects of scaling such reactors to larger wafer diameters.