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ISSN Online: 2377-424X

ISBN Print: 0-89116-559-2

International Heat Transfer Conference 8
August, 17-22, 1986, San Francisco, USA

INFLUENCE OF THE THERMAL ENVIRONMENT ON THE GROWTH OF SINGLE CRYSTALS IN A CZOCHRALSKI APPARATUS

Get access (open in a dialog) DOI: 10.1615/IHTC8.930
pages 1755-1760

Аннотация

Numerical analysis was performed to investigate the relationship between the growth of semiconductor single crystals and the thermal environment in a Czochralski apparatus. The newly developed computer program enables one to track the changes of both the temperature distribution in the crystal and the shape of the solid-melt interface during the entire period of crystal growth. Another noteworthy feature in the present growth simulation is the comprehensive analysis of radiative heat exchange between the crystal furface and the environment.
The computed results for the growth of silicon crystals are presented to show the effects of the crucible size on the solid-melt interface shape and the temperature gradients in the crystal, both of which have important bearing on crystal perfection.
The present study not only deals with one of applied heat transfer problems but also demonstrates the unique nature of heat transfer problems in the high technology area.