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ISSN Online: 2377-424X

ISBN CD: 1-56700-226-9

ISBN Online: 1-56700-225-0

International Heat Transfer Conference 13
August, 13-18, 2006, Sydney, Australia

MOLECULAR DYNAMICS SIMULATION AND THEORETICAL STUDY ON IN-PLANE THERMAL CONDUCTIVITY OF SINGLE CRYSTAL SILICON FILM AT NANOSCALE

Get access (open in a dialog) DOI: 10.1615/IHTC13.p8.100
13 pages

要約

The in-plane thermal conductivity of single crystal silicon film at nanoscale was numerically simulated by non-equilibrium molecular dynamics (NEMD) method and theoretically analyzed using phonon gas kinetic theory. In the NEMD simulation, a steady heat conduction model is constructed. The numerical and theoretical results show that the in-plane thermal conductivity of silicon film at nanoscale shows strong size effect and anisotropy, it decreases with the decreased film thickness, and its value is about twice lager than the out-of-plane thermal conductivity. The theoretical result is about 10% higher than the NEMD simulated one. The present NEMD scheme can be used to predict the in-plane thermal conductivity of single crystal silicon film at nanoscale.