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ISSN Online: 2377-424X

ISBN Print: 978-1-56700-474-8

ISBN Online: 978-1-56700-473-1

International Heat Transfer Conference 16
August, 10-15, 2018, Beijing, China

ENHANCEMENT OF INTERFACIAL THERMAL CONDUCTANCE OF SIC BY OVERLAPPED CARBON NANOTUBES AND INTERTUBE ATOMS

Get access (open in a dialog) DOI: 10.1615/IHTC16.mpe.022253
pages 5953-5959

Sinopsis

A new way was proposed to enhance the interfacial thermal conductance (ITC) of silicon carbide (SiC) composite through the overlapped carbon nanotubes (CNTs) and intertube atoms. By non-equilibrium molecular dynamics simulations, the dependence of ITC on both the number of intertube atoms and the temperature were studied. It is indicated that the ITC can be significantly enhanced by adding intertube atoms, and finally becomes saturated with the increase of the number of intertube atoms. And the mechanism is discussed by analyzing the probability distributions of atomic forces and vibrational density of states. The work may provide some guidance on enhancing the ITC of CNT-based composites.