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ISSN Online: 2377-424X

ISBN Print: 1-56032-797-9

International Heat Transfer Conference 11
August, 23-28, 1998, Kyongju, Korea

THERMAL ANALYSIS OF A SILICON WAFER DURING PLASAMA ETCHING

Get access (open in a dialog) DOI: 10.1615/IHTC11.360
pages 211-216

Sinopsis

This study develops a model of wafer heat transfer during plasma etching. The heat input due to ion bombardment and exothermic etching reactions are modeled as a function of plasma and wafer properties and etching rate, which in turn depends on plasma density and wafer temperature through the Arrhenius type relation. The paths of heat removal are also properly considered. A model for the thermal resistance between wafer and substrate electrode is developed based on the experiments conducted in the present study and the theory of Yovanovich and his coworkers. A semi-empirical correlation for the contact conductance between a silicon wafer and stainless steel surface under low contact pressures is obtained. Effects of nonuniformity in plasma density on wafer temperature and etching rate distribution were examined and discussed. Importance of various heat input and removal mechanisms were also analyzed.