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ISSN Online: 2377-424X

ISBN Print: 0-85295-345-3

International Heat Transfer Conference 10
August, 14-18, 1994, Brighton, UK

NUMERICAL SIMULATION OF MELTING OF LARGE-DIAMETER CRYSTALS USING AN ORBITAL SOLAR CONCENTRATOR

Get access (open in a dialog) DOI: 10.1615/IHTC10.160
pages 287-292

Sinopsis

The numerical modeling of the melting process of a crystal using an orbital solar concentrator is presented. The charge will start melting near the focal height, after which it is translated in order for the melt to resolidify as a single crystal. A ray-trace method has been developed to determine the incident concentrated solar heat flux on the ampoule surface for both perfectly-aligned and misaligned configurations. For the perfectly aligned charge, a transient 2-dimensional conduction problem with phase change is formulated, whereas once the perfect alignment of the charge's symmetry axis with the sun's incoming ray is perturbed, the problem becomes 3-dimensional due to the complex surface heat flux boundary condition. The commercial code FIDAP is used to solve the governing transport equation. By ignoring the participation of the ampoule in the heat transfer process, preliminary results highlighting the feasibility of growing GaAs, Ge and Si crystals with diameters of the order of 20 cm using the solar furnace satellite concept are presented. The transient temperature fields and the effect of misalignment angle on the melting process are quantified.