Abo Bibliothek: Guest

ISSN Online: 2377-424X

ISBN Print: 978-1-56700-474-8

ISBN Online: 978-1-56700-473-1

International Heat Transfer Conference 16
August, 10-15, 2018, Beijing, China

MODELING OF EPITAXIAL SILICON GROWTH IN A PLANETARY CVD REACTOR

Get access (open in a dialog) DOI: 10.1615/IHTC16.cms.023782
pages 1799-1807

Abstrakt

Multi-wafer planetary reactor is an important chemical device for the production of epitaxial films. The chemical and physical phenomenon involved in the reactor is very complex. Numerical modeling has been carried out to simulate transport phenomena and epitaxial silicon growth in a planetary chemical vapor deposition (CVD) reactor for the SiH2Cl2-H2-HCl system. In the present work, chemical kinetics of the SiH2Cl2-H2-HCl system has been modeled by using the simple reaction proposed by Kastelic et al. An improved detailed chemical reaction model for the calculation of rate constant has been developed and validated using experimental results and published results obtained in pancake reactor for the same gas mixture. Based on the validated chemical reaction model, a detailed modeling of a planetary reactor is conducted so that a fundamental understanding of gas flow patterns and transport phenomena in planetary reactor system, as well as a better control of operation conditions necessary to enhance the thin film quality are obtained. The effect of rotational speed of satellite, species concentration, sucseptor temperature, and operating pressure are investigated.