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International Heat Transfer Conference 15

ISSN: 2377-424X (online)
ISSN: 2377-4371 (flashdrive)

Study of Thermal Characteristics of Power Mosfet Package under Body-Diode and Saturate Test Conditions

Yafei Luo
Mentor Graphics Japan

Yasushi Kajita
Nagoya Municipal Industrial Research Institute

Tomoyuki Hatakeyama
Mechanical Systems Engineering, Toyama Prefectural University, 5180 Kurokawa, Imizu, Toyama 939-0398, Japan

Shinji Nakagawa
Toyama Prefectural University; Department of Mechanical Engineering, Aoyama Gakuin University, 6-16-1 Chitosedai, Setagaya, Tokyo 157-8572, Japan

Masaru Ishizuka
Toyama Prefectural University, 5180 Kurokawa, Imizu, Toyama 939-0398, Japan

DOI: 10.1615/IHTC15.min.009775
pages 4813-4820

KEY WORDS: Thermal management, Measurement and instrumentation, Power MOSFET, heat flow distribution, thermal transient test, structure function, CFD simulation


The distribution of heat flux in power MOSFET package is significantly affected by the effective heating area of MOSFET chip. Under different operation conditions, effective heating area changes depending on MOSFET’s working condition. In case when MOSFET works in saturation region (Vth < Vgs < Vth+Vds) hot spot occurs at channel pinch-off area which makes package’s thermal resistance higher than in linear region or its body-diode mode. This article studies thermal resistance change and gives numerical result based on thermal transient test on two popular commercial MOSFET packages. Calibrated CFD simulation model is also used to visualize heat flux distribution inside package and discuss how it affects package’s thermal characteristics.

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