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ISSN Online: 2377-424X

ISBN Print: 1-56032-797-9

International Heat Transfer Conference 11
August, 23-28, 1998, Kyongju, Korea

ANALYSIS OF HEAT AND MASS TRANSFER DURING MULTI-WAFER LOW PRESSURE CHEMICAL VAPOR DEPOSITION PROCESS

Get access (open in a dialog) DOI: 10.1615/IHTC11.240
pages 139-144

Abstract

An analysis of heat and mass transfer has been carried out for multi- wafer Low Pressure Chemical Vapor Deposition (LPCVD).
Surface radiation analysis considering specular radiation among wafers, heater, quartz tube and side plates of the reactor has been done to determine temperature distributions of wafers in two dimensions. Velocity, temperature and concentration fields of a chemical gas flowing in a reactor with multi-wafers have been then determined, which resulted in Si deposition growth rate and uniformity on wafers with using two different surface reaction models. The calculation results of temperatures and Si deposition have been compared and found to be in good agreement with the previous experiments.